Description
Description
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
Feature:
8A, 500V
rDS(ON) = 0.850Ω
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Attachment
Datasheet
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
Feature:
8A, 500V
rDS(ON) = 0.850Ω
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Attachment
Datasheet