RM6.30
Transistor IRF840 (Mosfet)
Price RM6.30
Product SKU TR-IRF-840
Size (L x W x H) 13 cm x 4 cm x 12 cm
Points Needed 630
Availability 28
Quantity
Description
Description


This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Feature:  

 8A, 500V
 rDS(ON) = 0.850Ω 
 Single Pulse Avalanche Energy Rated 
 SOA is Power Dissipation Limited
 Nanosecond Switching Speeds
 Linear Transfer Characteristics 
 High Input Impedance


Attachment

Datasheet